Optimisation de l’hétéro-épitaxie des semi-conducteurs III-As
• Optimisation de la croissance des alliages GaAsBi sur substrat GaAs par EPVOM
Effet de la température de croissance de GaAsBi sur substrat GaAs (001)
Effet de l’orientation du substrat GaAs : meilleure incorporation de Bi sur les surfaces (11n)A.
Propriétés structurales et optiques de GaAsBi (4%) après recuit à 550 °C.
Références:
Thermal processes contributions to the temperature dependence of the energy gap in dilute bismuth III-V alloys,
Zouaghi, S., Fitouri, H., Rebey, A.
(2022) Solid State Communications, 343, art. no. 114649, .
Photoreflectance and photoluminescence study of localization effects in GaAsBi alloys,
Fitouri, H., Essouda, Y., Zaied, I., Rebey, A., El Jani, B.
(2015) Optical Materials, 42, pp. 67-71.
Oxidation of bismuth nanodroplets deposit on GaAs substrate,
Fitouri, H., Boussaha, R., Rebey, A., El Jani, B.
(2013) Applied Physics A: Materials Science and Processing, 112 (3), pp. 701-710.
Atmospheric-Pressure Metalorganic Vapor Phase Epitaxy of GaAsBi Alloy on GaAs Substrate
Hédi Fitouri, Ahmed Rebey, and Belgacem El Jani
FROM THE EDITED VOLUME Bismuth-Containing Compounds
Edited by Springer Science+Business Media New York (2013)
Surface analysis of different oriented GaAs substrates annealed under bismuth flow,
Fitouri, H., Moussa, I., Rebey, A., El Jani, B.
(2007) Journal of Crystal Growth, 300 (2), pp. 347-352.
Optimisation de l’hétéro-épitaxie des semi-conducteurs III-N
• Optimisation de la croissance de GaN/Al2O3 par traitement SiN
Différents stades de croissance de GaN par traitement SiN du substrat saphir
Réflexion symétrique et asymétrique de GaN épitaxié par traitement SiN et évolution de la densité de dislocations.
Références:
Correlation of structural and optical properties of AlGaN films grown on SiN-treated sapphire by MOVPE,
Bouzidi, M., Alshammari, A.S., Soltani, S., Halidou, I., Chine, Z., Raza Khan, Z., Chaaben, N., Shakfa, M.K.
(2021) Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 263, art. no. 114866.
Time-resolved photoluminescence and photoreflectance spectroscopy of GaN layers grown on SiN-treated sapphire substrate:
Optical properties evolution at different growth stages,
Bouzidi, M., Soltani, S., Chine, Z., Rebey, A., Shakfa, M.K.
(2017) Optical Materials, 73, pp. 252-259.
Photoreflectance study of GaN grown on SiN treated sapphire substrate by MOVPE,
Bouzidi, M., Benzarti, Z., Halidou, I., Chine, Z., Bchetnia, A., El Jani, B.
(2015) Superlattices and Microstructures, 84, pp. 13-23.
Simulation of in situ reflectance-time during MOVPE of GaN on sapphire substrate,
Chaaben, N., Bouazizi, H., Saidi, C., Bchetnia, A., El Jani, B.
(2013) Superlattices and Microstructures, 64, pp. 518-534.
• Traitements thermiques et nano structuration de surface
Formation de nano particules de GaN par multi recuits.
Cathodoluminescence de GaN après multi recuits : Relaxation de la contrainte et amélioration des propriétés optiques.
Références:
In situ spectral reflectance analysis of the early stages of GaN thermal decomposition,
Malek, W., Bouzidi, M., Chaaben, N., Alshammari, A.S., Rebey, A.
(2022) Optik, 265, art. no. 169491.
Optical characterization by photoreflectance of GaN after its partial thermal decomposition,
Malek, W., Kahouli, A., Bouzidi, M., Chaaben, N., Alshammari, A.S., Salvestrini, J.P., Rebey, A.
(2021) Optik, 248, art. no. 168070.
Observation of the early stages of GaN thermal decomposition at 1200 °C under N2
Bouazizi, H., Bouzidi, M., Chaaben, N., …Salvestrini, J.P., Bchetnia, A.
(2018), Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 227, pp. 16–21
Study of Al diffusion in GaN during metal organic vapor phase epitaxy of AlGaN/GaN and AlN/GaN structures,
Chaaben, N., Laifi, J., Bouazizi, H., Saidi, C., Bchetnia, A., El Jani, B.
(2016) Materials Science in Semiconductor Processing, 42, pp. 359-363.
Study of the partial decomposition of GaN layers grown by MOVPE with different coalescence degree,
Bouazizi, H., Chaaben, N., El Gmili, Y., Bchetnia, A., Salvestrini, J.P., El Jani, B.
(2016) Journal of Crystal Growth, 434, pp. 72-76.
Effects of the diameter of thermally generated nanopits on carrier dynamics in AlGaN/GaN heterostructures,
M Bouzidi, W Malek, N Chaaben, AS Alshammari, ZR Khan, M Gandouzi,
(2022) Optical Engineering 61 (10), 105106.
• Optimisation de la croissance de GaN cubique sur GaAs (001) et (11n)
Résultats de croissance de GaN sur GaAs (001) et (11n) à 750 – 900 °C.
Références:
Growth and characterization of cubic GaN grown on GaAs (110) substrate by MOVPE,
Daldoul, I., Othmani, S., Mballo, A., Vuong, P., Salvestrini, J.P., Chaaben, N.
(2021) Materials Science in Semiconductor Processing, 132, art. no. 105909.
Role of the TMG flow rate on the GaN layer properties grown by MOVPE on (hkl) GaAs substrates
Laifi, J., Saidi, C., Chaaben, N., …El Gmili, Y., Salvestrini, J.P.
(2019), Materials Science in Semiconductor Processing, 101, pp. 253–261
Study of cubic GaN clusters in hexagonal GaN layers and their dependence with the growth temperature,
Laifi, J., Chaaben, N., El Gmili, Y., Salvestrini, J.P., Bchetnia, A., El Jani, B.
(2017) Vacuum, 138, pp. 8-14.
Effect of GaAs substrate orientation on the growth kinetic of GaN layer grown by MOVPE,
Laifi, J., Chaaben, N., Bouazizi, H., Fourati, N., Zerrouki, C., El Gmili, Y., Bchetnia, A., Salvestrini, J.P., El Jani, B.
(2016) Superlattices and Microstructures, 94, pp. 30-38.
Investigations of in situ reflectance of GaN layers grown by MOVPE on GaAs (0 0 1),
Laifi, J., Chaaben, N., Bouazizi, H., Fourati, N., Zerrouki, C., El Gmili, Y., Bchetnia, A., Salvestrini, J.P., El Jani, B.,
(2015) Superlattices and Microstructures, 86, pp. 472-482.
• Croissance des alliages peu adaptés GaScN et GaBiN
EPVOM de GaN : Sc à 1100 °C sur saphir traité SiN : Effet morphactant de Sc.
Références:
Growth of scandium doped GaN by MOVPE,
Saidi, C., Chaaben, N., Bchetnia, A., Fouzri, A., Sakly, N., El Jani, B.
(2013) Superlattices and Microstructures, 60, pp. 120-128.
EPVOM de GaN : Bi à 480 °C avec différents débits de TMBi : Effet surfactant de Bi.
Références:
Effect of TMBi supply on low-temperature MOVPE growth behavior of GaN,
Saidi, C., Chaaben, N., Laifi, J., Sekrafi, T., Tottereau, O., Bchetnia, A., El Jani, B.
(2015) Journal of Alloys and Compounds, 625, pp. 271-276.