Journaux

1- Thermodynamic approach of AlGaN MOVPE growth at atmospheric pressure , Halidou, I., Touré, A., El Jani, B.
(2019) Indian Journal of Physics, 93 (9), pp. 1137-1145.

2- Role of the TMG flow rate on the GaN layer properties grown by MOVPE on (hkl) GaAs substrates
Laifi, J., Saidi, C., Chaaben, N., …El Gmili, Y., Salvestrini, J.P.

(2019), Materials Science in Semiconductor Processing,101, pp. 253–261.

3- Electron Mobility Calculation of Diluted III–V-Nitrides Alloys, Chakir, K., Bilel, C., Rebey, A.
(2019) Semiconductors, 53 (13), pp. 1740-1744.

4- First-principles study of atomic and electronic structure of Bi/InP (001)-α 2 (2 × 4) and β 2 (2 × 4) surfaces, Hashassi, M., Ramzi, A., Kourchid, K., Rebey, A., Mbarki, M.

(2019) Materials Research Express, 6 (10), art. no. 106303.

5- Analysis of in situ thin films epitaxy by reflectance spectroscopy: Effect of growth parameters, Massoudi, I., Rebey, A.(2019) Superlattices and Microstructures, 131, pp. 66-85.

6- Effect of V/III ratio on the optical properties of (3 1 1)A and (3 1 1) B oriented InAlAs/InP heterostructures, Smiri, B., Fraj, I., Bouzidi, M., Saidi, F., Rebey, A., Maaref, H.

(2019) Results in Physics, 12, pp. 2175-2182.

7- In situ monitoring of InAsBi alloy grown under alternated bismuth flows by metalorganic vapor phase epitaxy, Boussaha, R., Fitouri, H., Rebey, A.

(2019) Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 241, pp. 22-26.

8- Spontaneous emission rate and radiative current density in p-GaAs/I-GaNaSbI/n-GaAs quantum well lasers,
Guizani, I.H., Rebey, A.A.

(2019) Journal of Computational and Theoretical Nanoscience, 16 (11), pp. 4474-4478.

9- Observation of the early stages of GaN thermal decomposition at 1200 °C under N2
Bouazizi, H., Bouzidi, M., Chaaben, N., …Salvestrini, J.P., Bchetnia, A.
(2018), Materials Science and Engineering B: Solid-State Materials for Advanced Technology,  227, pp. 16–211

10- Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy , Chine, Z., Fitouri, H., Zaied, I., Rebey, A., El Jani, B.
(2018) Semiconductor Science and Technology, 25 (6), art. no. 065009.

11- Study of Stark Effect in n-doped 1.55 μm InN0.92yP1−1.92yBiy/InP MQWs, Bilel, C., Chakir, K., Rebey, A., Alrowaili, Z.A.
(2018) Journal of Electronic Materials, 47 (8), pp. 4757-4763.

12- TEMPERATURE DEPENDENCE ON THE MORPHOLOGICAL EVOLUTION OF DILUTE InAsBi/GaAs NANOSTRUCTURES GROWN BY METALORGANIC VAPOR PHASE EPITAXY, Boussaha, R., Mzoughi, T., Fitouri, H., Rebey, A., El Jani, B.

(2017) Surface Review and Letters, 24 (8), art. no. 1750105.

13- Effect of SiN Treatment on Optical Properties of InxGa1−xN/GaN MQW Blue LEDs, Benzarti, Z., Sekrafi, T., Bougrioua, Z., Khalfallah, A., El Jani, B.

(2017) Journal of Electronic Materials, 46 (7), pp. 4312-4320.

14- MOVPE growth of InAsBi/InAs/GaAs heterostructure analyzed by in situ spectral reflectance,
Boussaha, R., Fitouri, H., Rebey, A., El Jani, B.
(2017) Journal of Materials Science: Materials in Electronics, 28 (12), pp. 8708-8716.

15- Theoretical study of the carrier effective mass in diluted III-N-V semiconductor alloys by using 10-band k.p model,
Chakir, K., Bilel, C., Habchi, M.M., Rebey, A., El Jani, B.

(2017) Thin Solid Films, 630, pp. 25-30.

16- Effects of p-type doping and electric field on electronic band structure and optical properties of GaNAsBi/GaAs quantum well detectors operating at 1.55 μm, Guizani, I., Bilel, C., Habchi, M.M., Rebey, A., El Jani, B.
(2017) Thin Solid Films, 630, pp. 66-70.

17- Study of cubic GaN clusters in hexagonal GaN layers and their dependence with the growth temperature,
Laifi, J., Chaaben, N., El Gmili, Y., Salvestrini, J.P., Bchetnia, A., El Jani, B.
(2017) Vacuum, 138, pp. 8-14.

18- Luminescence dynamics in AlGaN with AlN content of 20%,  Soltani, S., Bouzidi, M., Touré, A., Gerhard, M., Halidou, I., Chine, Z., El Jani, B., Shakfa, M.
(2017) Physica Status Solidi (A) Applications and Materials Science, 214 (4), art. no. 1600481.

19- Comprehensive study of the structural, optical and electrical properties of InAlAs: Mg films lattice matched to InP grown by MOVPE, Ezzedini, M., Bouzidi, M., Qaid, M.M., Chine, Z., Rebey, A., Sfaxi, L.
(2017) Journal of Materials Science: Materials in Electronics, 28 (23), pp. 18221-18227.

20- Time-resolved photoluminescence and photoreflectance spectroscopy of GaN layers grown on SiN-treated sapphire substrate: Optical properties evolution at different growth stages, Bouzidi, M., Soltani, S., Chine, Z., Rebey, A., Shakfa, M.K.
(2017) Optical Materials, 73, pp. 252-259.

21- Investigation of Optical Gain in 1.55 μm p-i-n GaNAsBi-Based DQWs, Guizani, I., Chakir, K., Habchi, M.M., Rebey, A.
(2017) Physica Status Solidi (C) Current Topics in Solid State Physics, 14 (10), art. no. 1700163.

22- Theoretical Predictions of Structural, Electronic, and Optical Properties of Dilute Bismide AlN1−xBixin Zinc-Blend Structures, Alaya, R., Slama, S., Hashassi, M., Mbarki, M., Rebey, A., Alaya, S.
(2017) Journal of Electronic Materials, 46 (4), pp. 1977-1983.

23- Optical gain spectra of 1.55 μm GaAs/GaN.58yAs1-1.58yBiy/GaAs single quantum well,
Guizani, I., Bilel, C., Habchi, M.M., Rebey, A.

(2017) Superlattices and Microstructures, 102, pp. 141-146.

24- Discontinuities and bands alignments of strain-balanced III-V-N/III-V-Bi heterojunctions for mid-infrared photodetectors, 

Chakir, K., Bilel, C., Habchi, M.M., Rebey, A.
(2017) Superlattices and Microstructures, 102, pp. 56-63.

25- The influence of In composition on properties of InxGa1-xAs/GaAs structures grown by MOVPE and in situ monitored by spectral reflectance,

Bedoui, M., Habchi, M.M., Moussa, I., Rebey, A.
(2017) Superlattices and Microstructures, 101, pp. 436-445.

26- Effect of band gap narrowing on GaAs tunnel diode I-V characteristics,
Lebib, A., Hannanchi, R., Beji, L., EL Jani, B.
(2016) Physica B: Condensed Matter, 502, pp. 93-96.

27- Calculation of [Formula presented] ternary phase diagram, 

Elayech, N., Fitouri, H., Boussaha, R., Rebey, A., El Jani, B.
(2016) Vacuum, 131, pp. 147-155.

28- Strain study of GaAs/InxGa1 − xAs/GaAs structures grown by MOVPE,

Bedoui, M., Habchi, M.M., Moussa, I., Rebey, A., El Jani, B.
(2016) Surface and Coatings Technology, 295, pp. 107-111.

29- Effect of GaAs substrate orientation on the growth kinetic of GaN layer grown by MOVPE, Laifi, J., Chaaben, N., Bouazizi, H., Fourati, N., Zerrouki, C., El Gmili, Y., Bchetnia, A., Salvestrini, J.P., El Jani, B.
(2016) Superlattices and Microstructures, 94, pp. 30-38.

30- Photoreflectance investigation of exciton-acoustic phonon scattering in GaN grown by MOVPE,
Bouzidi, M., Soltani, S., Halidou, I., Chine, Z., El Jani, B.
(2016) Solid State Sciences, 54, pp. 59-63.

31- Investigation of the doping and Stark effects on the band structure and optical absorption of 1.55 μm GaNAsBi/GaAs MQWs,
Bilel, C., Habchi, M.M., Ben Nasr, A., Guizani, I., Rebey, A., El Jani, B.
(2016) Current Applied Physics, 16 (3), pp. 340-347.

32- Assessment of refractive index changes by spectral reflectance in the first stages of AlxGa1-xN layer growth using SiN treatment, Benzarti, Z., Khelifi, M., Khalfallah, A., El Jani, B.
(2016) Journal of Materials Science: Materials in Electronics, 27 (6), pp. 6336-6346.

33- Photoreflectance investigation of band gap renormalization and the Burstein-Moss effect in Si doped GaN grown by MOVPE, Bouzidi, M., Benzarti, Z., Halidou, I., Soltani, S., Chine, Z., El Jani, B.
(2016) Materials Science in Semiconductor Processing, 42, pp. 273-276.

34- Al Incorporation at All Growth Stages of AlxGa1−xN Epilayers Using SiN Treatment,
Benzarti, Z., Halidou, I., Touré, A., El Jani, B.
(2016) Journal of Electronic Materials, 45 (2), pp. 872-880.

35- Study of Al diffusion in GaN during metal organic vapor phase epitaxy of AlGaN/GaN and AlN/GaN structures,
Chaaben, N., Laifi, J., Bouazizi, H., Saidi, C., Bchetnia, A., El Jani, B.
(2016) Materials Science in Semiconductor Processing, 42, pp. 359-363.

36- Study of the partial decomposition of GaN layers grown by MOVPE with different coalescence degree,
Bouazizi, H., Chaaben, N., El Gmili, Y., Bchetnia, A., Salvestrini, J.P., El Jani, B.
(2016) Journal of Crystal Growth, 434, pp. 72-76.

37- Ab initio predictions of structure preferences and band gap character in ordered AlAs1-xBix alloys, Alaya, R., Mbarki, M., Rebey, A., Postnikov, A.V.
(2016) Current Applied Physics, 16 (3), pp. 288-293.

38- Investigations of in situ reflectance of GaN layers grown by MOVPE on GaAs (0 0 1),
Laifi, J., Chaaben, N., Bouazizi, H., Fourati, N., Zerrouki, C., El Gmili, Y., Bchetnia, A., Salvestrini, J.P., El Jani, B.,
(2015) Superlattices and Microstructures, 86, pp. 472-482.

39- Study of Surface and Interface Roughness of GaN-Based Films Using Spectral Reflectance Measurements,
Benzarti, Z., Khelifi, M., Halidou, I., El Jani, B.
(2015) Journal of Electronic Materials, 44 (10), pp. 3243-3252.

40- Cathodoluminescence and depth profiling studies of unintentionally doped GaN films grown by MOVPE,
Tounsi, N., Guermazi, H., Guermazi, S., El Jani, B.
(2015) Materials Research Express, 2 (10), art. no. 106201.

41- Photoreflectance study of GaN grown on SiN treated sapphire substrate by MOVPE,
Bouzidi, M., Benzarti, Z., Halidou, I., Chine, Z., Bchetnia, A., El Jani, B.
(2015) Superlattices and Microstructures, 84, pp. 13-23.

42- Photoluminescence of GaAsBi/GaAs quantum dots grown by metalorganic vapor phase epitaxy,
Fitouri, H., Chakir, K., Chine, Z., Rebey, A., El Jani, B.
(2015) Materials Letters, 152, pp. 45-47.

43- Theoretical calculations of absorption spectra of GaNAsBi-based MQWs operating at 1.55 μm,
Ben Nasr, A., Habchi, M.M., Bilel, C., Rebey, A., El Jani, B.
(2015) Journal of Alloys and Compounds, 647, pp. 159-166.

44- Photoreflectance analysis of annealed vanadium-doped GaAs thin films grown by metalorganic vapor phase epitaxy, Fitouri, H., Bilel, C., Zaied, I., Bchetnia, A., Rebey, A., El Jani, B.
(2015) Solid State Communications, 217, pp. 21-24.

45- Carriers confinement study of GaNAsBi/GaAs QWs emitting at 1.3 and 1.55 μm,
Ben Nasr, A., Habchi, M.M., Bilel, C., Rebey, A., El Jani, B.
(2015) Semiconductors, 49 (5), pp. 593-599.

46- Stark effect in GaNAsBi/GaAs quantum wells operating at 1.55 μm,
Bilel, C., Habchi, M.M., Rebey, A., El Jani, B.
(2015) Thin Solid Films, 581, pp. 70-74.

47- Photoreflectance and photoluminescence study of localization effects in GaAsBi alloys,
Fitouri, H., Essouda, Y., Zaied, I., Rebey, A., El Jani, B.
(2015) Optical Materials, 42, pp. 67-71.

48- Effect of TMBi supply on low-temperature MOVPE growth behavior of GaN,
Saidi, C., Chaaben, N., Laifi, J., Sekrafi, T., Tottereau, O., Bchetnia, A., El Jani, B.
(2015) Journal of Alloys and Compounds, 625, pp. 271-276.

49- n doping effect modeling in 1.3 μm GaN0.58yAs1-1.58yBiy/GaAs quantum wells,
Bilel, C., Habchi, M.M., Rebey, A., El Jani, B.
(2015) Physica E: Low-Dimensional Systems and Nanostructures, 69, pp. 232-236.

50- Thermodynamic study of the ternary system gallium-arsenic-bismuth,
Elayech, N., Fitouri, H., Essouda, Y., Rebey, A., El Jani, B.
(2015) Physica Status Solidi (C) Current Topics in Solid State Physics, 12 (1-2), pp. 138-141.

51- Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy,
Bilel, C., Fitouri, H., Zaied, I., Bchetnia, A., Rebey, A., El Jani, B.
(2015) Materials Science in Semiconductor Processing, 31, pp. 100-105.

52- Pressure and composition dependence of structural, electronic and optical properties of GaAsBi alloys,
Alaya, R., Mbarki, M., Rebey, A.
(2015) Materials Science in Semiconductor Processing, 40, pp. 925-930.

53- First principles calculations of structure parameters and transition pressures of GaN1 − xBix alloys, Alaya, R., Mbarki, M., Rebey, A.
(2015) Semiconductors, 49 (3), pp. 279-284.

54- Analysis of the VIS-NIR spectral reflectance of Bi/GaAs structures grown by MOVPE and UHVE,
Habchi, M.M., Massoudi, I., Rebey, A., Ben Chaâbane, R., El Jani, B.
(2014) Journal of Crystal Growth, 395, pp. 26-30.

55- Effect of growth temperature and GaAs substrate misorientation on the morphology of InAsBi nanoislands grown by metalorganic vapor phase epitaxy, Boussaha, R., Fitouri, H., Rebey, A., Jani, B.E.
(2014) Applied Surface Science, 291, pp. 40-44.

56- Atmospheric-pressure metal-organic vapor-phase epitaxy of GaAsBi alloys on high-index GaAs substrates,
Zaied, I., Fitouri, H., Chine, Z., Rebey, A., El Jani, B.
(2014) Journal of Physics and Chemistry of Solids, 75 (2), pp. 244-251.

57- Self-consistent analysis of the band structure of doped lattice-matched GaNAsBi-based QWs operating at 1.55 μm, 

Habchi, M.M., Bilel, C., Ben Nasr, A., Rebey, A., El Jani, B.
(2014) Materials Science in Semiconductor Processing, 28, pp. 108-114.

58- Theoretical study of optoelectronic properties of GaAs1-xBix alloys using valence band anticrossing model,
Habchi, M.M., Ben Nasr, A., Rebey, A., El Jani, B.
(2014) Infrared Physics and Technology, 67, pp. 531-536.

59- Optical properties study of InxGa1- xAs/GaAs structures using spectral reflectance, photoreflectance and near-infrared photoluminescence, Habchi, M.M., Bedoui, M., Tounsi, N., Zaied, I., Rebey, A., El Jani, B.
(2014) Superlattices and Microstructures, 73, pp. 71-81.

60- Structural and optical properties of InxGa1-xAs strained layers grown on GaAs substrates by MOVPE, Habchi, M.M., Tounsi, N., Bedoui, M., Zaied, I., Rebey, A., El Jani, B.
(2014) Physica E: Low-Dimensional Systems and Nanostructures, 56, pp. 74-78.

61- Simulation of in situ reflectance-time during MOVPE of GaN on sapphire substrate,
Chaaben, N., Bouazizi, H., Saidi, C., Bchetnia, A., El Jani, B.
(2013) Superlattices and Microstructures, 64, pp. 518-534.

62- Electronic band structure calculation of GaNAsBi alloys and effective mass study,
Habchi, M.M., Ben Nasr, A., Rebey, A., El Jani, B.
(2013) Infrared Physics and Technology, 61, pp. 88-93.

63- Oxidation of bismuth nanodroplets deposit on GaAs substrate,
Fitouri, H., Boussaha, R., Rebey, A., El Jani, B.
(2013) Applied Physics A: Materials Science and Processing, 112 (3), pp. 701-710.

64- Effect of GaN template thickness and morphology on Al x Ga 1-x N (0 < x < 0.2) growth by MOVPE,
Halidou, I., Touré, A., Fouzri, A., Ramonda, M., El Jani, B.
(2013) Applied Surface Science, 280, pp. 660-665.

65- Growth of scandium doped GaN by MOVPE,
Saidi, C., Chaaben, N., Bchetnia, A., Fouzri, A., Sakly, N., El Jani, B.
(2013) Superlattices and Microstructures, 60, pp. 120-128.

66- Optical properties study of In.08Ga.92As/GaAs using spectral reflectance, photoreflectance and near-infrared Photoluminescence,
Tounsi, N., Habchi, M.M., Chine, Z., Rebey, A., El Jani, B.
(2013) Superlattices and Microstructures, 59, pp. 133-143.

67- Atmospheric-pressure metalorganic vapor phase epitaxy of GaAsBi alloy on GaAs substrate,
Fitouri, H., Rebey, A., El Jani, B.
(2013) Springer Series in Materials Science, 186, pp. 117-139.

68- Effect of Si doping on optical and thermal properties of MOVPE GaNthin layers,
Saadallah, F., Benzarti, Z., Halidou, I., Yacoubi, N., El Jani, B.
(2013) Optik, 124 (23), pp. 6190-6193.

69- Influence of GaN template thickness and morphology on AlxGa 1-xN luminescence properties,
Halidou, I., Touré, A., Nguyen, L., Bchetnia, A., El Jani, B.
(2013) Optical Materials, 35 (5), pp. 988-992.

70- Ab initio investigation of structural and electronic properties of zinc blende AlN1-xBix alloys, Mbarki, M., Alaya, R., Rebey, A.
(2013) Solid State Communications, 155, pp. 12-15.

71- Optical and morphological study of misoriented GaAs substrates exposed to bismuth flow using in situ spectral reflectance and atomic force microscopy, Massoudi, I., Habchi, M.M., Rebey, A., El Jani, B.
(2012) Journal of Crystal Growth, 353 (1), pp. 77-82.

72- Effects of high-temperature annealing on magnetic properties of V-doped GaN thin films grown by MOCVD,
Souissi, M., Schmerber, G., Derory, A., El Jani, B.
(2012) Journal of Magnetism and Magnetic Materials, 324 (16), pp. 2539-2542.

73- High resolution X-ray diffraction study of InAs layers grown with and without bismuth flow on GaAs substrates by metalorganic vapor phase epitaxy, Mzoughi, T., Fitouri, H., Moussa, I., Rebey, A., El Jani, B.
(2012) Journal of Alloys and Compounds, 524, pp. 26-31.

74- Characterization of low Al content Al xGa 1-xN epitaxial films grown by atmospheric-pressure MOVPE,

Touré, A., Halidou, I., Benzarti, Z., Fouzri, A., Bchetnia, A., El Jani, B.
(2012) Physica Status Solidi (A) Applications and Materials Science, 209 (5), pp. 977-983.

75- Erratum: The annealing effects of V-doped GaN thin films grown by MOCVD (Journal of Crystal Growth (2012) 340 (47-50)),
Souissi, M., Bouzidi, M., El Jani, B.
(2012) Journal of Crystal Growth, 345 (1), p. 69.

76- Study of surface roughness using spectral reflectance measurements recorded during the MOVPE of InAs/GaAs heterostructures,
Massoudi, I., Habchi, M.M., Rebey, A., El Jani, B.

(2012) Physica E: Low-Dimensional Systems and Nanostructures, 44 (7-8), pp. 1282-1287.

77- In situ spectral reflectance investigation of InAs/GaAs heterostructures grown by MOVPE,
Massoudi, I., Habchi, M.M., Rebey, A., El Jani, B.
(2012) Journal of Electronic Materials, 41 (3), pp. 498-505.

78- The annealing effects of V-doped GaN thin films grown by MOCVD,
Souissi, M., Bouzidi, M., El Jani, B.
(2012) Journal of Crystal Growth, 340 (1), pp. 47-50.

79- First principles calculations of structural and electronic properties of GaN 1-xBi x alloys, 

Mbarki, M., Rebey, A.
(2012) Journal of Alloys and Compounds, 530, pp. 36-39.

80- Growth of GaAsBi alloy under alternated bismuth flows by metalorganic vapor phase epitaxy,
Chine, Z., Fitouri, H., Zaied, I., Rebey, A., El Jani, B.
(2011) Journal of Crystal Growth, 330 (1), pp. 35-38.

81- Optical and theoretical investigations of V2+ ion in GaN,
Souissi, H., Souissi, M., Dammak, M., Chine, Z., Kammoun, S., El Jani, B.
(2011) Physica Status Solidi (C) Current Topics in Solid State Physics, 8 (5), pp. 1616-1619.

82- Photoreflectance study of InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs quantum wells,
Dhifallah, I., Daoudi, M., Bardaoui, A., Eljani, B., Ouerghi, A., Chtourou, R.
(2011) Journal of Luminescence, 131 (5), pp. 1007-1012.

83- Study of GaAsBi MOVPE growth on (1 0 0) GaAs substrate under high Bi flow rate by high resolution X-ray diffraction,
Fitouri, H., Moussa, I., Rebey, A., El Jani, B.
(2011) Microelectronic Engineering, 88 (4), pp. 476-479.

84- First-principles calculation of the physical properties of GaAs 1-xBix alloys, Mbarki, M., Rebey, A.
(2011) Semiconductor Science and Technology, 26 (10), art. no. 105020.

85- Surfactant effect of bismuth in atmospheric pressure MOVPE growth of InAs layers on (1 0 0) GaAs substrates,
Ben Naceur, H., Mzoughi, T., Moussa, I., Nguyen, L., Rebey, A., El Jani, B.
(2010) Physica E: Low-imensional Systems and Nanostructures, 43 (1), pp. 106-110.

86- Room-temperature ferromagnetism in V-doped GaN thin films grown by MOCVD,
Souissi, M., Schmerber, G., Derory, A., Jani, B.El.
(2010) Physica Status Solidi (C) Current Topics in Solid State Physics, 7 (9), pp. 2302-2305.

87- Luminescent properties of GaN films grown on porous silicon substrate,
Matoussi, A., Ben Nasr, F., Boufaden, T., Salh, R., Fakhfakh, Z., Guermazi, S., ElJani, B., Fitting, H.-J.
(2010) Journal of Luminescence, 130 (3), pp. 399-403.

88- Properties of InAs grown on misoriented GaAs substrates by atmospheric pressure metal-organic vapor phase epitaxy,
Ben Naceur, H., Mzoughi, T., Moussa, I., Rebey, A., El Jani, B.
(2010) Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 268 (3-4), pp. 236-240.

89- Diffusion behaviour of vanadium in GaN thin films studied by secondary ion mass spectrometry,
Bchetnia, A., Saidi, C., Souissi, M., Boufaden, T., El Jani, B.
(2009) Semiconductor Science and Technology, 24 (9), art. no. 095020.

90- Heteroepitaxial growth of thin InAs layers on GaAs(1 0 0) misoriented substrates: A structural and morphological comparison,
Ben Naceur, H., Moussa, I., Tottereau, O., Rebey, A., El Jani, B.
(2009) Physica E: Low-Dimensional Systems and Nanostructures, 41 (10), pp. 1779-1783.

91- Spectroscopic ellipsometry study of GaAs1-xBix material grown on GaAs substrate by atmospheric pressure metal-organic vapor-phase epitaxy, Ben Sedrine, N., Moussa, I., Fitouri, H., Rebey, A., El Jani, B., Chtourou, R.
(2009) Applied Physics Letters, 95 (1), art. no. 011910.

92- GaN thermal decomposition in N2 AP-MOCVD environment,
Bchetnia, A., Kemis, I., Touré, A., Fathallah, W., Boufaden, T., Jani, B.E.
(2008) Semiconductor Science and Technology, 23 (12), art. no. 125025.

93- Effect of thermal annealing on structural and optical properties of the GaAs0.963Bi0.037 alloy,
Moussa, I., Fitouri, H., Chine, Z., Rebey, A., El Jani, B.
(2008) Semiconductor Science and Technology, 23 (12), art. no. 125034.

94- Temperature effect study on structural and morphological properties of In.08Ga.92As/GaAs structures grown by MOVPE,
Habchi, M.M., Rebey, A., El Jani, B.
(2008) Journal of Crystal Growth, 310 (24), pp. 5259-5265.

95- AP-MOVPE of InGaAs on GaAs (0 0 1): Analysis of in situ reflectivity response,
Habchi, M.M., Rebey, A., El Jani, B.
(2008) Microelectronics Journal, 39 (12), pp. 1587-1593.

96- Near-infrared photoluminescence of V-doped GaN,
Touati, H., Souissi, M., Chine, Z., El Jani, B.
(2008) Microelectronics Journal, 39 (12), pp. 1457-1460.

97- Effect of carrier gas on the surface morphology of V-doped GaN layers,
Souissi, M., Touati, H., Fouzri, A., Bchetnia, A., Jani, B.E.
(2008) Microelectronics Journal, 39 (12), pp. 1521-1524.

98- Atmospheric-pressure metalorganic vapour phase epitaxy optimization of GaAsBi alloy,
Moussa, I., Fitouri, H., Rebey, A., El Jani, B.
(2008) Thin Solid Films, 516 (23), pp. 8372-8376.

99- Mosaicity and stress effects on luminescence properties of GaN,
Toure, A., Bchetnia, A., Lafford, T.A., Benzarti, Z., Halidou, I., Bougrioua, Z., El Jani, B.
(2008) Physica Status Solidi (A) Applications and Materials Science, 205 (8), pp. 2042-2046.

100- Magnesium diffusion profile in GaN grown by MOVPE,
Benzarti, Z., Halidou, I., Bougrioua, Z., Boufaden, T., El Jani, B.
(2008) Journal of Crystal Growth, 310 (14), pp. 3274-3277.

101- Morphological, structural and optical properties of GaN grown on porous silicon/Si(100) substrate,

Matoussi, A., Ben Nasr, F., Salh, R., Boufaden, T., Guermazi, S., Fitting, H.-J., Eljani, B., Fakhfakh, Z.
(2008) Materials Letters, 62 (3), pp. 515-519.

102- Study of the thermal step signal of GaN grown on porous silicon substrate by MOVPE,

Bergaoui, M.S., Boufaden, T., Guermazi, S., Agnel, S., Toureille, A., Jani, B.
(2008) Journal of Materials Science: Materials in Electronics, 19 (12), pp. 1156-1159.

103- On the use of the thermal step method as a tool for study of space charge in semiconductor gallium nitride: GaN,

Bergaoui, M.S., Matoussi, A., Chaabane, N., Guermazi, S., Toureille, A., El Jani, B.
(2007) Physica Status Solidi (C) Current Topics in Solid State Physics, 4 (1), pp. 212-215.

104- Analysis of GaN decomposition in an atmospheric MOVPE vertical reactor,

Fathallah, W., Boufaden, T., El Jani, B.
(2007) Physica Status Solidi (C) Current Topics in Solid State Physics, 4 (1), pp. 145-149.

105- GaN property evolution at all stages of MOVPE Si/N treatment growth,

Halidou, I., Benzarti, Z., Fitouri, H., Fathallah, W., El Jani, B.
(2007) Physica Status Solidi (C) Current Topics in Solid State Physics, 4 (1), pp. 129-132.

106- Theoretical and experiment study of cathodoluminescence of GaN,

Ben Nasr, F., Matoussi, A., Salh, R., Boufaden, T., Guermazi, S., Fitting, H.-J., Eljani, B., Fakhfakh, Z.
(2007) AIP Conference Proceedings, 935, pp. 65-71.

107- Effect of thickness on structural and electrical properties of GaN films grown on SiN-treated sapphire,

Bchetnia, A., Touré, A., Lafford, T.A., Benzarti, Z., Halidou, I., Habchi, M.M., El Jani, B.
(2007) Journal of Crystal Growth, 308 (2), pp. 283-289.

108- Surface analysis of different oriented GaAs substrates annealed under bismuth flow,

Fitouri, H., Moussa, I., Rebey, A., El Jani, B.
(2007) Journal of Crystal Growth, 300 (2), pp. 347-352.

109- High resolution X-ray diffraction of GaN grown on Si (1 1 1) by MOVPE,
Chaaben, N., Boufaden, T., Fouzri, A., Bergaoui, M.S., Jani, B.E.
(2006) Applied Surface Science, 253 , pp. 241-245.

110- Laser reflectometry in situ monitoring of InGaAs grown by atmospheric pressure metalorganic vapour phase epitaxy,

Habchi, M.M., Rebey, A., Fouzri, A., El Jani, B.
(2006) Applied Surface Science, 253 (1 SPEC. ISS.), pp. 275-278.

111- Modeling of laser reflectance evolution during metalorganic vapor phase epitaxy growth of GaN using SiN treatment,

Fitouri, H., Benzarti, Z., Halidou, I., Boufaden, T., Jani, B.E.
(2006) Applied Surface Science, 253 (1 SPEC. ISS.), pp. 258-260.

112- Thermodynamic analysis of Si doping in GaN,

Halidou, I., Benzarti, Z., Boufaden, T., El Jani, B.
(2006) Superlattices and Microstructures, 40 (4-6 SPEC. ISS.), pp. 496-500.

113- Morphological properties of AlN and GaN grown by MOVPE on porous Si(111) and Si(111) substrates,

Chaaben, N., Yahyaoui, J., Christophersen, M., Boufaden, T., El Jani, B.
(2006) Superlattices and Microstructures, 40 (4-6 SPEC. ISS.), pp. 483-489.

114- Correlation between morphological, electrical and optical properties of GaN at all stages of MOVPE Si/N treatment growth,

Halidou, I., Benzarti, Z., Bougrioua, Z., Boufaden, T., El Jani, B.
(2006) Superlattices and Microstructures, 40 (4-6 SPEC. ISS.), pp. 490-495.

115- AP-MOVPE of thin GaAs1-xBix alloys,

Fitouri, H., Moussa, I., Rebey, A., Fouzri, A., El Jani, B.
(2006) Journal of Crystal Growth, 295 (2), pp. 114-118.

116- Study of space charge in gallium nitride by the thermal step method,

Matoussi, A., Bergaoui, S., Boufaden, T., Guermazi, S., Mlik, Y., El jani, B., Toureille, A.
(2006) Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 130 (1-3), pp. 89-93.

117- Stress and density of defects in Si-doped GaN,

Chine, Z., Rebey, A., Touati, H., Goovaerts, E., Oueslati, M., El Jani, B., Laugt, S.
(2006) Physica Status Solidi (A) Applications and Materials Science, 203 (8), pp. 1954-1961.

118- Effects of thermal annealing on n-type GaAs:V grown by MOCVD,

Bchetnia, A., Rebey, A., Fave, J.L., Bourgoin, J.C., El Jani, B.
(2006) Journal of Physics D: Applied Physics, 39 (7), pp. 1337-1341.

119- Realisation of ‘solar blind’ AlGaN photodetectors: Measured and calculated spectral response,

Touzi, C., Omnès, F., Boufaden, T., Gibart, P., El Jani, B.
(2006) Microelectronics Journal, 37 (4), pp. 336-339.

120- In depth study of the compensation in annealed heavily carbon doped GaAs,

Rebey, A., Fathallah, W., El Jani, B.
(2006) Microelectronics Journal, 37 (2), pp. 158-166.

121- Photoluminescence of V-doped GaN thin films grown by MOVPE technique,

Souissi, M., Chine, Z., Bchetnia, A., Touati, H., El Jani, B.
(2006) Microelectronics Journal, 37 (1), pp. 1-4.

122- Statistical analysis of vanadium in gallium arsenide,

Rebey, A., Bchetnia, A., El Jani, B.
(2005) Physica Status Solidi (A) Applications and Materials Science, 202 (14), pp. 2759-2763.

123- Laser-reflectometry monitoring of the GaN growth by MOVPE using SiN treatment: Study and simulation,

Fitouri, H., Benzarti, Z., Halidou, I., Boufaden, T., El Jani, B.
(2005) Physica Status Solidi (A) Applications and Materials Science, 202 (13), pp. 2467-2473.

124- LP MOVPE growth and characterization of high Al content Al xGa1-xN epilayers,

Touzi, C., Omnès, F., El Jani, B., Gibart, P.
(2005) Journal of Crystal Growth, 279 (1-2), pp. 31-36.

125- Growth of vanadium-doped GaN by MOVPE,

Souissi, M., Bchetnia, A., El Jani, B.
(2005) Journal of Crystal Growth, 277 (1-4), pp. 57-63.

126- Electron beam-induced current investigation of GaN schottky diode,

Matoussi, A., Boufaden, T., Guermazi, S., Mlik, Y., El Jani, B., Toureille, A.
(2005) Journal of Electronic Materials, 34 (7), pp. 1059-1064.

127- Comparative study between electrical, optical and structural properties of annealed heavily carbon doped GaAs,

Rebey, A., Chine, Z., Fathallah, W., El Jani, B., Goovaerts, E., Laugt, S.
(2004) Microelectronics Journal, 35 (11), pp. 875-880.

128- Structural and optical characterization of GaN grown on porous silicon substrate by MOVPE,

Chaaben, N., Boufaden, T., Christophersen, M., El Jani, B.
(2004) Microelectronics Journal, 35 (11), pp. 891-895.

129- Diffusion of vanadium in GaAs,

Bchetnia, A., Souissi, M., Rebey, A., El Jani, B.
(2004) Journal of Crystal Growth, 270 (3-4), pp. 376-379.

130- Influence of silane flow on MOVPE grown GaN on sapphire substrate by an in situ SiN treatment,

Halidou, I., Benzarti, Z., Boufaden, T., El Jani, B., Juillaguet, S., Ramonda, M.
(2004) Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 110 (3), pp. 251-255.

131- Study of GaAs layers grown on Ge substrates by MOVPE and in situ monitored by laser reflectometry,

Rebey, A., Habchi, M.M., Benzarti, Z., El Jani, B.
(2004) Microelectronics Journal, 35 (2), pp. 179-184.

132- In situ reflectance monitoring of the growth and etching of AlAs/GaAs structures in MOVPE,

Rebey, A., Habchi, M.M., Bchetnia, A., El Jani, B.
(2004) Journal of Crystal Growth, 261 (4), pp. 450-457.

133- Effect of SiN treatment on GaN epilayer quality,

Benzarti, Z., Halidou, I., Boufaden, T., El Jani, B., Juillaguet, S., Ramonda, M.
(2004) Physica Status Solidi (A) Applied Research, 201 (3), pp. 502-508.

134- Optical properties of GaN grown on porous silicon substrate,

Boufaden, T., Matoussi, A., Guermazi, S., Juillaguet, S., Toureille, A., Mlik, Y., El Jani, B.
(2004) Physica Status Solidi (A) Applied Research, 201 (3), pp. 582-587.

135- Minority carrier diffusion lengths and optical self-absorption coefficient in undoped GaN,

Matoussi, A., Boufaden, T., Guermazi, S., Eljani, B., Mlik, Y., Toureille, A.
(2003) Physica Status Solidi (B) Basic Research, 240 (1), pp. 160-168.

136- GaN growth on porous silicon by MOVPE,

Boufaden, T., Chaaben, N., Christophersen, M., El Jani, B.
(2003) Microelectronics Journal, 34 (9), pp. 843-848.

137- A study of deep levels in vanadium-doped GaAs grown by OMVPE,

Bchetnia, A., Rebey, A., Bourgoin, J.C., Eljani, B.
(2003) Semiconductor Science and Technology, 18 (6), pp. 445-448.

138- New photoluminescence lines in Vanadium doped GaAs grown by MOVPE,

Bchetnia, A., Rebey, A., El Jani, B., Cernogora, J., Fave, J.-L.
(2003) Microelectronics Journal, 34 (4), pp. 271-274.

139- Influence of metal properties and photodiode parameters on the spectral response of n-GaN Schottky photodiode,

Touzi, C., Rebey, A., Eljani, B.
(2002) Microelectronics Journal, 33 (11), pp. 961-965.

140- Silicon effect on GaN surface morphology,

Benzarti, Z., Halidou, I., Tottereau, O., Boufaden, T., El Jani, B.
(2002) Microelectronics Journal, 33 (11), pp. 995-998.

141- Morphological study of GaN layers grown on porous silicon,

Missaoui, A., Ezzaouia, H., Bessaïs, B., Boufaden, T., Matoussi, A., Bouaïcha, M., El Jani, B.
(2002) Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 93 (1-3), pp. 102-106.

142- Porous silicon as an intermediate buffer layer for GaN growth on (100) Si,

Matoussi, A., Boufaden, T., Missaoui, A., Guermazi, S., Bessaïs, B., Mlik, Y., El Jani, B.
(2001) Microelectronics Journal, 32 (12), pp. 995-998.

143- Characterization of GaN layers grown on porous silicon,

Missaoui, A., Saadoun, M., Boufaden, T., Bessaïs, B., Rebey, A., Ezzaouia, H., El Jani, B.
(2001) Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 82 (1-3), pp. 98-101.

144- Annealing effect on GaN buffer layer surface,

Halidou, I., Boufaden, T., Touhami, A., Rebey, A., Jani, B.E.L.
(2001) Physica Status Solidi (A) Applied Research, 184 (1), pp. 263-271.

145- High quality p+-n+-GaAs tunnel junction diode grown by atmospheric pressure metalorganic vapour phase epitaxy,

Beji, L., El Jani, B., Gibart, P.
(2001) Physica Status Solidi (A) Applied Research, 183 (2), pp. 273-279.

146- Determination of the diffusion length and the optical self absorption coefficient using EBIC model,

Guermazi, S., Guermazi, H., Mlik, Y., El Jani, B., Grill, C., Toureille, A.
(2001) EPJ Applied Physics, 16 (1), pp. 45-51.

147- Ageing phenomena and determination of the optical self absorption coefficient in PN junction,

Guermazi, S., Mlik, Y., El Jani, B., Grill, C.
(2001) EPJ Applied Physics, 16 (1), pp. 53-57.

148- Heavily silicon-doped GaN by MOVPE,

Halidou, I., Benzarti, Z., Chine, Z., Boufaden, T., El Jani, B.
(2001) Microelectronics Journal, 32 (2), pp. 137-142.

149- Growth of GaN films on porous silicon by MOVPE,

Missaoui, A., Saadoun, M., Ezzaouia, H., Bessaïs, B., Boufaden, T., Rebey, A., El Jani, B.
(2000) Physica Status Solidi (A) Applied Research, 182 (1), pp. 189-193.

150- Extended generation profile – E.B.I.C. model application in the case of a PN junction,

Guermazi, S., Toureille, A., Grill, C., El Jani, B.
(2000) EPJ Applied Physics, 9 (1), pp. 43-49.

151- Statistical analysis in the negative-U model of donors in [formula omitted], Rziga-Ouaja, F., Mejri, H., Triki, A., Selmi, A., Rebey, A.

(2000) Journal of Applied Physics, 88 (5), pp. 2583-2587.

152- GaN growth by a hot filament metalorganic vapor phase deposition technique,

Boufaden, T., Rebey, A., Halidou, I., Chine, Z., Haffouz, S., El Jani, B.
(1999) Physica Status Solidi (A) Applied Research, 176 (1), pp. 411-414.

153- Thermodynamic analysis of growth rate reduction by VCl4 during metalorganic vapor-phase epitaxy of GaAs,

Bchetnia, A., Rebey, A., Boufaden, T., El Jani, B.
(1999) Journal of Crystal Growth, 207 (1), pp. 15-19.

154- Hot filament assisted metalorganic vapor-phase deposition of GaN,

Boufaden, T., Rebey, A., El Jani, B.
(1999) Journal of Crystal Growth, 206 (1-2), pp. 1-7.

155- In situ optical monitoring of metalorganic vapor phase epitaxy growth of C-doped GaAs,

Rebey, A., El Jani, B., Leycuras, A., Laugt, S., Gibart, P.
(1999) Applied Physics A: Materials Science and Processing, 68 (3), pp. 349-352.

156- Anti-Stokes photoluminescence of yellow band in GaN: Evidence of two-photon excitation process,

Chine, Z., Piriou, B., Oueslati, M., Boufaden, T., El Jani, B.
(1999) Journal of Luminescence, 82 (1), pp. 81-84.

157- In situ optical monitoring of the decomposition of GaN thin films,

Rebey, A., Boufaden, T., El Jani, B.
(1999) Journal of Crystal Growth, 203 (1), pp. 12-17.

158- New vanadium dopant precursor for GaAs growth by metalorganic vapor-phase epitaxy,

Rebey, A., Bchetnia, A., Benjeddou, Ch., El Jani, B., Gibart, P.
(1998) Journal of Crystal Growth, 194 (3-4), pp. 292-296.

159- Etching of GaAs by CCl4 and VCl4 in a metalorganic vapor-phase epitaxy reactor,

Rebey, A., Bchetnia, A., El Jani, B.
(1998) Journal of Crystal Growth, 194 (3-4), pp. 286-291.

160- Optical monitoring of the growth rate reduction by CCl4 during metalorganic vapour-phase epitaxy deposition of carbon doped GaAs, Rebey, A., Béji, L., El Jani, B., Gibart, P.

(1998) Journal of Crystal Growth, 191 (4), pp. 734-739.

161- Hydrostatic pressure studies of GaAs tunnel diodes,

Beji, L., El Jani, B., Gibart, P., Portal, J.C., Basmaji, P.
(1998) Journal of Applied Physics, 83 (10), pp. 5573-5575.

162- Incorporation modes of silicon in GaAs: Si grown by metalorganic vapor phase epitaxy,

Beji, L., Rebey, A., El Jani, B.
(1998) EPJ Applied Physics, 4 (3), pp. 269-273.

163- Very high silicon concentration by MOVPE in GaAs,

Beji, L., Chine, Z., Jani, B.El., Oueslati, M.
(1998) Physica Status Solidi (A) Applied Research, 168 (2), pp. 453-462.

164- High quality GaN grown by MOVPE,

Beaumont, B., Vaille, M., Boufaden, T., El Jani, B., Gibart, P.
(1997) Journal of Crystal Growth, 170 (1-4), pp. 316-320.

165- Alternative N precursors and Mg doped GaN grown by MOVPE,

Beaumont, B., Vaille, M., Lorenzini, P., Gibart, P., Boufaden, T., El Jani, B.
(1996) MRS Internet Journal of Nitride Semiconductor Research, 1, pp. 6d.

166- Extended generation profile – E.B.I.C. Model,

Guermazi, S., Toureille, A., Grill, C., El Jani, B., Lakhoua, N.
(1996) Journal de Physique III, 6 (4), pp. 481-490.

167- Observation of the DX center in Pb-doped GaAs,

Willke, U., Maude, D.K., Sallese, J.M., Fille, M.L., El Jani, B., Gibart, P., Portal, J.C.
(1993) Applied Physics Letters, 62 (26), pp. 3467-3469.

168- Photoluminescence of Heavily Doped SnGaAs Grown by Metal Organics Vapor Phase Epitaxy,

Hadj, A.B., El Jani, B., Guittard, M., Bennaceur, R., Gibart, P.
(1990) physica status solidi (a), 117 (1), pp. 169-176.

169- Shallow and deep donors in n-type Ga1-xAlxAs @B: Sn grown by metalorganic vapor-phase epitaxy,

El Jani, B., Köhler, K., N’Guessan, K., Bel Hadj, A., Gibart, P.
(1988) Journal of Applied Physics, 63 (9), pp. 4518-4523.

170- Sn119 Mössbauer study of shallow and deep states of Sn in Ga1-xAlxAs,

Gibart, P., Williamson, D.L., El Jani, B., Basmaji, P.
(1988) Physical Review B, 38 (3), pp. 1885-1892.

171- Mössbauer spectroscopy of Sn-doped GaAs grown by metalorganic vapor-phase epitaxy,

Williamson, D.L., Gibart, P., El Jani, B., N’Guessan, K.
(1987) Journal of Applied Physics, 62 (5), pp. 1739-1744.

172- Effective masses in Sn-doped Ga1-xAlxAs (x<0.33) determined by the Shubnikov-de Haas effect,

El Jani, B., Gibart, P., Portal, J.C., Aulombard, R.L.
(1985) Journal of Applied Physics, 58 (9), pp. 3481-3484.

173- GaAs METAL ORGANICS VAPOUR PHASE EPITAXY: RESIDUAL CARBON.,

el Jani, B., Leroux, M., Grenet, J.C., Gibart, P.
(1982) Journal de Physique (Paris), Colloque, 43 (12), pp. 303-310.

174- In situ etching of GaAs using AsCl3 in MOVPE. II,

El Jani, B., Guittard, M., Grenet, J.Cl., Gibart, P.
(1982) Journal of Crystal Growth, 60 (1), pp. 131-135.

175- In situ etching of GaAs using AsCl3 in MOVPE. I,

El Jani, B., Grenet, J.-C., Guittard, M., Senouci, B.
(1982) Journal of Crystal Growth, 58 (2), pp. 381-386.